Optical spectra of CdSe nanocrystals under hydrostatic pressure
文献类型：期刊论文
| 作者 | Li JB
|
| 刊名 | journal of physics-condensed matter
 |
| 出版日期 | 2001 |
| 卷号 | 13期号:9页码:2033-2043 |
| 关键词 | IN0.55AL0.45AS/AL0.5GA0.5AS QUANTUM DOTS SEMICONDUCTOR NANOCRYSTALS SIZE DEPENDENCE PHOTOLUMINESCENCE SPECTROSCOPY ELECTRONIC-STRUCTURE RAMAN-SCATTERING EXCITON-STATES ABSORPTION TRANSITION WURTZITE |
| ISSN号 | 0953-8984 |
| 通讯作者 | li jb,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | optical spectra of cdse nanocrystals are measured at room temperature under pressure ranging from 0 to 5.2 gpa. the exciton energies shift linearly with pressure below 5.2 gpa. the pressure coefficient is 27 mev gpa(-1) for small cdse nanocrystals with the radius of 2.4 nm. with the approximation of a rigid-atomic pseudopotential, the pressure coefficients of the energy band are calculated. by using the hole effective-mass hamiltonian for the semiconductors with wurtzite structure under various pressures, we study the exciton states and optical spectra for cdse nanocrystals under hydrostatic pressure in detail. the intrinsic asymmetry of the hexagonal lattice structure and the effect of spin-orbit coupling on the hole states are investigated. the coulomb interaction of the exciton states is also taken into account. it is found that the theoretical results are in good agreement with the experimental values. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12264]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li JB. Optical spectra of CdSe nanocrystals under hydrostatic pressure[J]. journal of physics-condensed matter,2001,13(9):2033-2043. |
| APA | Li JB.(2001).Optical spectra of CdSe nanocrystals under hydrostatic pressure.journal of physics-condensed matter,13(9),2033-2043. |
| MLA | Li JB."Optical spectra of CdSe nanocrystals under hydrostatic pressure".journal of physics-condensed matter 13.9(2001):2033-2043. |
入库方式： OAI收割
来源：半导体研究所
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