Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
文献类型：期刊论文
| 作者 | Wang XD ; Niu ZC ; Feng SL ; Miao ZH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 223期号:3页码:363-368 |
| 关键词 | atomic force microscopy low dimensional structures optical microscopy molecular beam epitaxy nanomaterials semiconducting III-V materials laser diodes TEMPERATURE-DEPENDENCE M PHOTOLUMINESCENCE INGAAS OVERGROWTH GAAS DOTS EMISSION ENERGY LASER |
| ISSN号 | 0022-0248 |
| 通讯作者 | niu zc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we report the effect of inchiga1-chias (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (pl) properties of 1.3 mum wavelength self-assembled inas quantum islands, which are formed via depositing 3.5 monolayers (ml) inas on gaas (1 0 0) substrate by molecular beam epitaxy (mbe). compared with the inchiga1-chias capping layer containing a larger in mole fraction chi greater than or equal to0.2 and the gaas capping layer (chi = 0), the inas islands covered by the in0.1ga0.9as layer show pl with lower emission energy, narrower full-width at half-maximum (fwhm), and quite stronger intensity. the pl peak energy and fwhm become more temperature dependent with the increase of in content in the inchiga1-chias capping layer (chi greater than or equal to0.2), while the inas islands covered by the in0.1ga0.9as layer is much less temperature sensitive. in addition, the inas islands covered by the in0.1ga0.9as capping layer show room temperature pl wavelength at about 1.3 mum. (c) 2001 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12266]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XD,Niu ZC,Feng SL,et al. Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands[J]. journal of crystal growth,2001,223(3):363-368. |
| APA | Wang XD,Niu ZC,Feng SL,&Miao ZH.(2001).Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands.journal of crystal growth,223(3),363-368. |
| MLA | Wang XD,et al."Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands".journal of crystal growth 223.3(2001):363-368. |
入库方式： OAI收割
来源：半导体研究所
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