Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Li LH ; Pan Z ; Zhang W ; Lin YW ; Wang XY ; Wu RH ; Ge WK |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 223期号:1-2页码:140-144 |
| ISSN号 | 0022-0248 |
| 关键词 | molecular beam epitaxy quantum wells BAND-GAP ENERGY PHOTOLUMINESCENCE TEMPERATURE GANXAS1-X FILMS |
| 通讯作者 | li lh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the effect of ion-induced damage on ganas/gaas quantum wells (qws) grown by molecular beam epitaxy employing a dc plasma as the n source was investigated. ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the x-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. it was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the qws. the bandedge potential fluctuations for the samples grown with and without ion removal magnets (irms) are 44 and 63 mev, respectively. it was found that the n-as atomic interdiffusion at the interfaces of the qws was enhanced by the ion damage-induced defects. the estimated activation energies of the n-as atomic interdiffusion for the samples grown with and without irms are 3.34 and 1.78 ev, respectively. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12276]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li LH,Pan Z,Zhang W,et al. Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy[J]. journal of crystal growth,2001,223(1-2):140-144. |
| APA | Li LH.,Pan Z.,Zhang W.,Lin YW.,Wang XY.,...&Ge WK.(2001).Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy.journal of crystal growth,223(1-2),140-144. |
| MLA | Li LH,et al."Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy".journal of crystal growth 223.1-2(2001):140-144. |
入库方式： OAI收割
来源：半导体研究所
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