Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of vacuum science & technology b
 |
| 出版日期 | 2001 |
| 卷号 | 19期号:1页码:197-201 |
| 关键词 | ORIENTED GAAS INAS ISLANDS HIGH-INDEX SURFACES TEMPERATURE TOPOGRAPHY STRAIN LASER |
| ISSN号 | 1071-1023 |
| 通讯作者 | jiang wh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a systematic study of self-organized in0.5ga0.5as quantum dots (qds) and islands grown by molecular beam epitaxy on (100) and (n11) a/b gaas substrates is given, where n varies from 1 to 5. low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of qds on different substrates. from (100) to (111) surface, the photoluminescence peak position of dots on b surfaces is found to blueshift more than that on a surfaces. qds are also formed on (511) a surface. the positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. two kinds of islands are formed on (111) a surface, but further work is needed to explain the mechanism of these islands. (c) 2001 american vacuum society. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12278]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy[J]. journal of vacuum science & technology b,2001,19(1):197-201. |
| APA | Xu B.(2001).Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy.journal of vacuum science & technology b,19(1),197-201. |
| MLA | Xu B."Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy".journal of vacuum science & technology b 19.1(2001):197-201. |
入库方式： OAI收割
来源：半导体研究所
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