中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy

文献类型:期刊论文

作者Xu B
刊名journal of vacuum science & technology b
出版日期2001
卷号19期号:1页码:197-201
关键词ORIENTED GAAS INAS ISLANDS HIGH-INDEX SURFACES TEMPERATURE TOPOGRAPHY STRAIN LASER
ISSN号1071-1023
通讯作者jiang wh,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要a systematic study of self-organized in0.5ga0.5as quantum dots (qds) and islands grown by molecular beam epitaxy on (100) and (n11) a/b gaas substrates is given, where n varies from 1 to 5. low-temperature photoluminescence results show that the properties of the dots have a strong dependence on the substrate orientation as revealed by atomic force microscopy, consistent with the differences in size, shape, and distribution of qds on different substrates. from (100) to (111) surface, the photoluminescence peak position of dots on b surfaces is found to blueshift more than that on a surfaces. qds are also formed on (511) a surface. the positional distribution of these dots exhibits a wavy shape, which is related to the corrugated structure of this surface. two kinds of islands are formed on (111) a surface, but further work is needed to explain the mechanism of these islands. (c) 2001 american vacuum society.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12278]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xu B. Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy[J]. journal of vacuum science & technology b,2001,19(1):197-201.
APA Xu B.(2001).Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy.journal of vacuum science & technology b,19(1),197-201.
MLA Xu B."Substrate dependence of InGaAs quantum dots grown by molecular beam epitaxy".journal of vacuum science & technology b 19.1(2001):197-201.

入库方式: OAI收割

来源:半导体研究所

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