Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells
文献类型：期刊论文
| 作者 | Luo XD ; Xu ZY ; Pan Z ; Li LH ; Lin YW ; Ge WK |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2001 |
| 卷号 | 20期号:1页码:25-29 |
| 关键词 | GaNAs band offset PL MOLECULAR-BEAM EPITAXY ALLOYS GANAS/GAAS 1.3-MU-M GAASN |
| ISSN号 | 1001-9014 |
| 通讯作者 | luo xd,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the optical properties and the band lineup in ganas/gaas single quantum wells (sqws) grown by molecular beam epitaxy (mbe) using photoluminescence (pl) technique were investigated. it was found that the low-temperature pl is dominated by the intrinsic localized exciton emission. by fitting the experimental datawith a simple calculation, band offset of the gan0.015as0.985/gaas heterostructure was estimated. moreover, deltae(c), the discontinuity of the conduction band was found to be a nonlinear function of the nitrogen composition (chi) and the average variation of deltae(c) is about 0. 110ev per % n, such smaller than that reported on the literature to (0.156 similar to 0.175 ev/n %). in addition, qc has little change whtn n composition increares, with an experimential relation of qc approximate tox(0.25). the band bowing coefficient (b) was also studied in this paper. the measured band bowing coefficient shows a strong function of chi, giving an experimental support to the theoretic calculation of wei su-huai and zunger alex (1996). |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12284]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Luo XD,Xu ZY,Pan Z,et al. Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells[J]. journal of infrared and millimeter waves,2001,20(1):25-29. |
| APA | Luo XD,Xu ZY,Pan Z,Li LH,Lin YW,&Ge WK.(2001).Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells.journal of infrared and millimeter waves,20(1),25-29. |
| MLA | Luo XD,et al."Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells".journal of infrared and millimeter waves 20.1(2001):25-29. |
入库方式： OAI收割
来源：半导体研究所
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