Investigation on InGaAs/InAlAs quantum cascade lasers
文献类型:期刊论文
作者 | Zhang QS ; Liu FQ ; Zhang YZ ; Wang ZG ; Gao HH ; Krier A |
刊名 | journal of infrared and millimeter waves
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出版日期 | 2001 |
卷号 | 20期号:1页码:41-43 |
关键词 | quantum cascade subband transition laser |
ISSN号 | 1001-9014 |
通讯作者 | zhang qs,chinese acad sci,inst semicond,natl integrated optoelect lab,beijing 100083,peoples r china. |
中文摘要 | the preparation and main characteristics of the ingaas/inalas quantum cascade laser were given. the device has a reinforced ridge waveguide structure. the threshold current obtained at 80k is about 0. 5a, and the corresponding threshold current density is about 5ka/cm(2). |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 中文 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12286] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Zhang QS,Liu FQ,Zhang YZ,et al. Investigation on InGaAs/InAlAs quantum cascade lasers[J]. journal of infrared and millimeter waves,2001,20(1):41-43. |
APA | Zhang QS,Liu FQ,Zhang YZ,Wang ZG,Gao HH,&Krier A.(2001).Investigation on InGaAs/InAlAs quantum cascade lasers.journal of infrared and millimeter waves,20(1),41-43. |
MLA | Zhang QS,et al."Investigation on InGaAs/InAlAs quantum cascade lasers".journal of infrared and millimeter waves 20.1(2001):41-43. |
入库方式: OAI收割
来源:半导体研究所
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