中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation on InGaAs/InAlAs quantum cascade lasers

文献类型:期刊论文

作者Zhang QS ; Liu FQ ; Zhang YZ ; Wang ZG ; Gao HH ; Krier A
刊名journal of infrared and millimeter waves
出版日期2001
卷号20期号:1页码:41-43
关键词quantum cascade subband transition laser
ISSN号1001-9014
通讯作者zhang qs,chinese acad sci,inst semicond,natl integrated optoelect lab,beijing 100083,peoples r china.
中文摘要the preparation and main characteristics of the ingaas/inalas quantum cascade laser were given. the device has a reinforced ridge waveguide structure. the threshold current obtained at 80k is about 0. 5a, and the corresponding threshold current density is about 5ka/cm(2).
学科主题光电子学
收录类别SCI
语种中文
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12286]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Zhang QS,Liu FQ,Zhang YZ,et al. Investigation on InGaAs/InAlAs quantum cascade lasers[J]. journal of infrared and millimeter waves,2001,20(1):41-43.
APA Zhang QS,Liu FQ,Zhang YZ,Wang ZG,Gao HH,&Krier A.(2001).Investigation on InGaAs/InAlAs quantum cascade lasers.journal of infrared and millimeter waves,20(1),41-43.
MLA Zhang QS,et al."Investigation on InGaAs/InAlAs quantum cascade lasers".journal of infrared and millimeter waves 20.1(2001):41-43.

入库方式: OAI收割

来源:半导体研究所

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