Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate
文献类型：期刊论文
| 作者 | Chen Y ; Li GH ; Zhu ZM ; Han HX ; Wang ZP ; Zhou W ; Wang ZG |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2001 |
| 卷号 | 20期号:1页码:53-56 |
| 关键词 | InAlAs/AlGaAs quantum dot pressure photoluminescence QUANTUM DOTS PRESSURE SUPERLATTICES LINEWIDTH INSB GASB |
| ISSN号 | 1001-9014 |
| 通讯作者 | chen y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the photoluminescence (pl) spectra of self-assembled in0.55al0.45as/al0.45ga0.5as quantum dots (qd) grown on (311)a gaas substrate were measured. the type- i character of pl related to the x valley was verified by excitation power dependence of peak position and the pl spectra under different pressure , which was attributed to the type- ii transition from x valley in al0.5ga0.5as to heavy holes in in0.55al0.45as the high energy gamma -related transition was also observed above 70k and assigned as the transition between gamma valley and heavy holes in in-0.55 al0.45as. the x-valley split was discussed to interpret the observed second x-related peak under pressure. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12288]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Y,Li GH,Zhu ZM,et al. Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate[J]. journal of infrared and millimeter waves,2001,20(1):53-56. |
| APA | Chen Y.,Li GH.,Zhu ZM.,Han HX.,Wang ZP.,...&Wang ZG.(2001).Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate.journal of infrared and millimeter waves,20(1),53-56. |
| MLA | Chen Y,et al."Photoluminescence studies of type-II self-assembled InAlAs/AlGaAs QDs grown on (311)A GaAs substrate".journal of infrared and millimeter waves 20.1(2001):53-56. |
入库方式： OAI收割
来源：半导体研究所
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