中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electronic states of InAs/GaAs quantum ring

文献类型:期刊论文

作者Li SS ; Xia JB
刊名journal of applied physics
出版日期2001
卷号89期号:6页码:3434-3437
ISSN号0021-8979
通讯作者li ss,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要in the framework of effective mass envelope function theory, the electronic states of the inas/gaas quantum ring are studied. our model can be used to calculate the electronic states of quantum wells, quantum wires, and quantum dots. in calculations, the effects due to the different effective masses of electrons in rings and out rings are included. the energy levels of the electron are calculated in the different shapes of rings. the results indicate that the inner radius of rings sensitively changes the electronic states. the energy levels of the electron are not sensitively dependent on the outer radius for large rings. if decreasing the inner and outer radii simultaneously, one may increase the energy spacing between energy levels and keep the ground state energy level unchanged. if changing one of two radii (inner or outer radius), the ground state energy level and the energy spacing will change simultaneously. these results are useful for designing and fabricating the double colors detector by intraband and interband translations. the single electron states are useful for studying the electron correlations and the effects of magnetic fields in quantum rings. our calculated results are consistent with the recent experimental data of nanoscopic semiconductor rings. (c) 2001 american institute of physics.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12290]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li SS,Xia JB. Electronic states of InAs/GaAs quantum ring[J]. journal of applied physics,2001,89(6):3434-3437.
APA Li SS,&Xia JB.(2001).Electronic states of InAs/GaAs quantum ring.journal of applied physics,89(6),3434-3437.
MLA Li SS,et al."Electronic states of InAs/GaAs quantum ring".journal of applied physics 89.6(2001):3434-3437.

入库方式: OAI收割

来源:半导体研究所

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