Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells
文献类型：期刊论文
| 作者 | Liu JJ ; Zhang SF ; Li YX ; Kong XJ |
| 刊名 | european physical journal b
 |
| 出版日期 | 2001 |
| 卷号 | 19期号:1页码:17-20 |
| 关键词 | BINDING-ENERGY 2-DIMENSIONAL SEMICONDUCTORS NEUTRAL DONORS BIEXCITONS PHOTOLUMINESCENCE IMPURITY |
| ISSN号 | 1434-6028 |
| 通讯作者 | liu jj,hebei normal univ,dept phys,shijiazhuang 050016,peoples r china. |
| 中文摘要 | using a two-parameter wave function, we calculate variationally the binding energy of an exciton bound to an ionized donor impurity (d+,x) in gaas-alxga1-xas quantum wells for the values of the well width from 10 to 300 angstrom, when the dopant is located in the center of the well and at the edge of the well. the theoretical results confirm that the previous experimental speculation proposed by reynolds tit al. [phys. rev. b 40, 6210 (1989)] is the binding energy of d+,x for the dopant at the edge of the well. in addition, we also calculate the center-of-mass wave function of the exciton and the average interparticle distances. the results are discussed in detail. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12296]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JJ,Zhang SF,Li YX,et al. Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells[J]. european physical journal b,2001,19(1):17-20. |
| APA | Liu JJ,Zhang SF,Li YX,&Kong XJ.(2001).Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells.european physical journal b,19(1),17-20. |
| MLA | Liu JJ,et al."Variational calculations of ionized-donor-bound excitons in GaAs-AlxGa1-xAs quantum wells".european physical journal b 19.1(2001):17-20. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。