Ion bombardment as the initial stage of diamond film growth
文献类型：期刊论文
| 作者 | Liao MY ; Qin FG ; Zhang JH ; Liu ZK ; Yang SY ; Wang ZG ; Lee ST |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2001 |
| 卷号 | 89期号:3页码:1983-1985 |
| 关键词 | BIAS-ENHANCED NUCLEATION CHEMICAL-VAPOR-DEPOSITION BEAM DEPOSITION MECHANISM SILICON SPECTROSCOPY |
| ISSN号 | 0021-8979 |
| 通讯作者 | liao my,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | it is believed that during the initial stage of diamond film growth by chemical-vapor deposition (cvd), ion bombardment is the main mechanism in the bias-enhanced-nucleation (ben) process. to verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a si substrate. the results are similar to those of the ben process, which supports the ion-bombardment-enhanced-nucleation mechanism. the formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. the ion-bombarded si is expected to enhance the cvd diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12310]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liao MY,Qin FG,Zhang JH,et al. Ion bombardment as the initial stage of diamond film growth[J]. journal of applied physics,2001,89(3):1983-1985. |
| APA | Liao MY.,Qin FG.,Zhang JH.,Liu ZK.,Yang SY.,...&Lee ST.(2001).Ion bombardment as the initial stage of diamond film growth.journal of applied physics,89(3),1983-1985. |
| MLA | Liao MY,et al."Ion bombardment as the initial stage of diamond film growth".journal of applied physics 89.3(2001):1983-1985. |
入库方式： OAI收割
来源：半导体研究所
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