Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate
文献类型：期刊论文
| 作者 | Xu HZ ; Bell A ; Wang ZG ; Okada Y ; Kawabe M ; Harrison I ; Foxon CT |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 222期号:1-2页码:96-103 |
| 关键词 | gallium nitride metalorganic vapor-phase epitaxy photoluminescence yellow luminescence N-TYPE GAN PERSISTENT PHOTOCONDUCTIVITY THIN-FILMS DOPED GAN DEEP LEVELS ORIGIN PHOTOLUMINESCENCE DEPENDENCE VACANCIES EPITAXY |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu hz,univ tsukuba,inst appl phys,tsukuba,ibaraki 3058573,japan. |
| 中文摘要 | undoped gan epilayer on c-face (0 0 0 1) sapphire substrate has been grown by metalorganic vapor-phase epitaxy (movpe) in a horizontal-type low-pressure two-channel reactor. photoluminescence (pl) as a function of temperature and excitation intensity have been systematically studied, and the competition between near band gap ultraviolet (uv) and defect-related yellow luminescence (yl) has been extensively investigated, it is revealed that the ratio of the uv-to-yl peak intensities depends strongly on the excitation intensity and the measurement temperature. the obtained results have been analyzed in comparison with the theoretical predications based on a bimolecular model. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12318]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu HZ,Bell A,Wang ZG,et al. Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate[J]. journal of crystal growth,2001,222(1-2):96-103. |
| APA | Xu HZ.,Bell A.,Wang ZG.,Okada Y.,Kawabe M.,...&Foxon CT.(2001).Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate.journal of crystal growth,222(1-2),96-103. |
| MLA | Xu HZ,et al."Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate".journal of crystal growth 222.1-2(2001):96-103. |
入库方式： OAI收割
来源：半导体研究所
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