Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE
文献类型：期刊论文
| 作者 | Xu HZ ; Takahashi K ; Wang CX ; Wang ZG ; Okada Y ; Kawabe M ; Harrison I ; Foxon CT |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2001 |
| 卷号 | 222期号:1-2页码:110-117 |
| 关键词 | gallium nitride metalorganic vapor-phase epitaxy (MOVPE) annealing crystal quality CHEMICAL-VAPOR-DEPOSITION MOLECULAR-BEAM EPITAXY BUFFER LAYER PHASE EPITAXY DEPENDENCE DEFECTS |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu hz,univ tsukuba,inst appl phys,tsukuba,ibaraki 3058573,japan. |
| 中文摘要 | gan epilayers on sapphire substrate grown by metalorganic vapor-phase epitaxy (movpe) in a horizontal-type low-pressure two-channel reactor were investigated. samples were characterized by x-ray diffraction (xrd), raman scattering, atomic force microscopy (afm) and photoluminescence (pl) measurements. the influence of the temperature changes between low temperature (lt) deposited gan buffer and high temperature (wt) grown gan epilayer on crystal quality of epilayer was extensively studied. the effect of in situ thermal annealing during the growth on improving the gan layer crystal quality was demonstrated and the possible mechanism involved in such a growth process was discussed. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12320]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu HZ,Takahashi K,Wang CX,et al. Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE[J]. journal of crystal growth,2001,222(1-2):110-117. |
| APA | Xu HZ.,Takahashi K.,Wang CX.,Wang ZG.,Okada Y.,...&Foxon CT.(2001).Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE.journal of crystal growth,222(1-2),110-117. |
| MLA | Xu HZ,et al."Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE".journal of crystal growth 222.1-2(2001):110-117. |
入库方式： OAI收割
来源：半导体研究所
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