Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates
文献类型：期刊论文
| 作者 | Chen NF ; Zhong XR ; Lin LY ; Zhang M ; Wang YS ; Bai XW ; Zhao J |
| 刊名 | applied physics letters
 |
| 出版日期 | 2001 |
| 卷号 | 78期号:4页码:478-479 |
| 关键词 | FLOATING-ZONE GROWTH ZERO GRAVITY MICROGRAVITY STOICHIOMETRY SEGREGATION SILICON GE |
| ISSN号 | 0003-6951 |
| 通讯作者 | chen nf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | semi-insulating gallium arsenide single crystal grown in space has been used in fabricating low noise field effect transistors and analog switch integrated circuits by the direct ion-implantation technique. all key electrical properties of these transistors and integrated circuits have surpassed those made from conventional earth-grown gallium arsenide. this result shows that device-grade space-grown semiconducting single crystal has surpassed the best terrestrial counterparts. (c) 2001 american institute of physics. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12324]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Zhong XR,Lin LY,et al. Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates[J]. applied physics letters,2001,78(4):478-479. |
| APA | Chen NF.,Zhong XR.,Lin LY.,Zhang M.,Wang YS.,...&Zhao J.(2001).Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates.applied physics letters,78(4),478-479. |
| MLA | Chen NF,et al."Comparison of field effect transistor characteristics between space-grown and earth-grown gallium arsenide single crystal substrates".applied physics letters 78.4(2001):478-479. |
入库方式： OAI收割
来源：半导体研究所
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