Resonant Raman scattering of a-SiNx : H
文献类型：期刊论文
| 作者 | Wang Y ; Yue RF ; Han HX ; Liao XB ; Wang YQ ; Diao HW ; Kong GL |
| 刊名 | materials letters
 |
| 出版日期 | 2001 |
| 卷号 | 47期号:1-2页码:50-54 |
| 关键词 | a-Sin(x): H films resonant Raman scattering quantum confinement model POLYCRYSTALLINE DIAMOND FILMS AMORPHOUS-SILICON HYDROGENATED MICROCRYSTALLINE SPECTROSCOPY ALLOYS |
| ISSN号 | 0167-577x |
| 通讯作者 | wang y,tsing hua univ,inst microelect,dept engn phys,beijing 100084,peoples r china. |
| 中文摘要 | micro-raman measurements were carried out to investigate the microstructure of amorphous silicon-nitrogen alloy (a-sinx:h) samples with different n contents prepared by plasma enhanced chemical vapor deposition (pecvd). resonant raman effect was discovered by using 647.1- and 514.5-nm excitation wavelengths. the frequency of to mode downshifts with increasing photon energy without varying its width, while lo mode expands to a great extent. the frequency-dependent shift of to band is explained by heterogeneous structure model and quantum confinement model, and the width expansion of lo mode may be related to the overlapping of la and lo bands. (c) 2001 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12326]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Y,Yue RF,Han HX,et al. Resonant Raman scattering of a-SiNx : H[J]. materials letters,2001,47(1-2):50-54. |
| APA | Wang Y.,Yue RF.,Han HX.,Liao XB.,Wang YQ.,...&Kong GL.(2001).Resonant Raman scattering of a-SiNx : H.materials letters,47(1-2),50-54. |
| MLA | Wang Y,et al."Resonant Raman scattering of a-SiNx : H".materials letters 47.1-2(2001):50-54. |
入库方式： OAI收割
来源：半导体研究所
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