Strain-compensated quantum cascade lasers operating at room temperature
文献类型：期刊论文
| 作者 | Jiang DS ; Wang ZG; Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 220期号:4页码:439-443 |
| 关键词 | quantum cascade laser strain-compensation molecular beam epitaxy MOLECULAR-BEAM EPITAXY MU-M PERFORMANCE |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu fq,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | quantum cascade (qc) lasers based on strain-compensated inxga(1-x)as/inyal(1-y)as grown on inp substrate using molecular beam epitaxy is reported. the epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal x-ray diffraction and cross-section transmission electron microscopy of the qc laser wafer. laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesc) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mw and threshold current density of 2.7ka/cm(2) at this temperature. (c) 2000 published by elsevier science b.v. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12334]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS,Wang ZG,Xu B. Strain-compensated quantum cascade lasers operating at room temperature[J]. journal of crystal growth,2000,220(4):439-443. |
| APA | Jiang DS,Wang ZG,&Xu B.(2000).Strain-compensated quantum cascade lasers operating at room temperature.journal of crystal growth,220(4),439-443. |
| MLA | Jiang DS,et al."Strain-compensated quantum cascade lasers operating at room temperature".journal of crystal growth 220.4(2000):439-443. |
入库方式： OAI收割
来源：半导体研究所
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