The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao F ; Huang DD ; Li JP ; Lin YX ; Kong MY ; Li JM ; Zeng YP ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 220期号:4页码:457-460 |
| 关键词 | GSMBE SiGe alloy doping SIMS HBT current gain SI |
| ISSN号 | 0022-0248 |
| 通讯作者 | gao f,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | three n-p-n si/sige/si heterostructures with different layer thickness and doping concentration have been grown by a home-made gas source molecular-beam epitaxy (gsmbe) system using phosphine (ph3) and diborane (b2h6) as n-and p-type in situ doping sources, respectively. heterojunction bipolar transistors (hbts) have been fabricated using these structures and a current gain of 40 at 300 k and 62 at 77 k have been obtained. the influence of thickness and doping concentration of the deposited layers on the current gain of the hbts is discussed. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12336]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao F,Huang DD,Li JP,et al. The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy[J]. journal of crystal growth,2000,220(4):457-460. |
| APA | Gao F.,Huang DD.,Li JP.,Lin YX.,Kong MY.,...&Lin LY.(2000).The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy.journal of crystal growth,220(4),457-460. |
| MLA | Gao F,et al."The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy".journal of crystal growth 220.4(2000):457-460. |
入库方式： OAI收割
来源：半导体研究所
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