Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Gao F ; Huang DD ; Li JP ; Lin YX ; Kong MY ; Sun DZ ; Li JM ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 220期号:4页码:461-465 |
| 关键词 | Si growth rate P doping PH3 flow rate P segregation GSMBE CHEMICAL-VAPOR-DEPOSITION SI1-XGEX PHOSPHORUS SI2H6 DISILANE SI(100) MBE |
| ISSN号 | 0022-0248 |
| 通讯作者 | gao f,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | as reported by other authors, we have also observed that the si growth rate decreases with increasing phosphine (ph3) flow rate in gas source-si molecular beam epitaxy using phosphorous (p) as a n-type dopant. why small quantity ph3 can affect si growth rate? up to now, the quantitative characterization of ph3 flow influence on si growth rate is little known. in this letter, the ph, influence will be analyzed in detail and a model considering strong p surface segregation and its absorption of hydrogen will be proposed to characterize the effect. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12338]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Gao F,Huang DD,Li JP,et al. Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy[J]. journal of crystal growth,2000,220(4):461-465. |
| APA | Gao F.,Huang DD.,Li JP.,Lin YX.,Kong MY.,...&Lin LY.(2000).Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy.journal of crystal growth,220(4),461-465. |
| MLA | Gao F,et al."Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy".journal of crystal growth 220.4(2000):461-465. |
入库方式： OAI收割
来源：半导体研究所
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