Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 77期号:25页码:4148-4150 |
| 关键词 | MOLECULAR-BEAM EPITAXY GAASN |
| ISSN号 | 0003-6951 |
| 通讯作者 | sun bq,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the optical properties of above- and below-band-edge transitions have been investigated by incorporating in atoms into ganas/gaas single quantum wells. the experimental results show that with increasing in concentration the interband luminescence is improved and the luminescence intensity below the band edge in gainnas/gaas decreases significantly. an interpretation is given that n atoms are preferable to form a covalent bond with in than with ga atoms in a gainnas alloy, due to the compensation of the atomic-size difference between in and n atoms on the gaas substrate. the photoreflectance spectra of the gainnas/gaas single quantum well support the assignment of an intrinsic mechanism to the high-energy luminescence peak. (c) 2000 american institute of physics. [s0003- 6951(00)01752-6]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12346]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells[J]. applied physics letters,2000,77(25):4148-4150. |
| APA | Jiang DS.(2000).Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells.applied physics letters,77(25),4148-4150. |
| MLA | Jiang DS."Influence of dual incorporation of In and N on the luminescence of GaInNAs/GaAs single quantum wells".applied physics letters 77.25(2000):4148-4150. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。