Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction
文献类型：期刊论文
| 作者 | Lian P ; Yin T ; Gao G ; Zou DS ; Chen CH ; Li JJ ; Shen GD ; Ma XY ; Chen LH |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2000 |
| 卷号 | 49期号:12页码:2374-2377 |
| 关键词 | semiconductor lasers high power MOCVD OPERATION |
| ISSN号 | 1000-3290 |
| 通讯作者 | lian p,beijing polytech univ,dept elect engn,beijing 100022,peoples r china. |
| 中文摘要 | a novel semiconductor laser structure is put forward to resolve the major difficulties of high power laser diodes. in this structure, several active regions are cascaded by tunnel junctions to form a large optical cavity and to achieve super high efficiency. this structure can solve the problems of catastrophic optical damage of facet, thermal damage and poor light beam quality effectively. low-pressure metalorganic chemical vapor deposition method is adopted to grow the novel semiconductor laser structures, which are composed of si:gaas/c:gaas tunnel junctions, gaas/ingaas strain quantum well active regions. external differential quantum efficiency as high as 2.2 and light power output of 2.5 w per facet (under 2a drive current) are achieved from an uncoated novel laser device with three active regions. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12348]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lian P,Yin T,Gao G,et al. Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction[J]. acta physica sinica,2000,49(12):2374-2377. |
| APA | Lian P.,Yin T.,Gao G.,Zou DS.,Chen CH.,...&Chen LH.(2000).Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction.acta physica sinica,49(12),2374-2377. |
| MLA | Lian P,et al."Novel coupled multi-active region high power semiconductor lasers cascaded via tunnel junction".acta physica sinica 49.12(2000):2374-2377. |
入库方式： OAI收割
来源：半导体研究所
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