Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction
文献类型：期刊论文
| 作者 | Peng YC ; Xu GY ; He YL ; Liu M ; Li YX |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2000 |
| 卷号 | 49期号:12页码:2466-2471 |
| 关键词 | (n)nc-Si : H/(p)c-Si heterojunction band model carrier transport mechanisms temperature properties CRYSTALLINE |
| ISSN号 | 1000-3290 |
| 通讯作者 | peng yc,hebei univ,coll elect & informat engn,baoding 071002,peoples r china. |
| 中文摘要 | phosphor-doped nano-crystalline silicon ((n))nc-si:h) films are successfully grown on the p-type (100) oriented crystal silicon ((p) c-si) substrate by conventional plasma-enhanced chemical vapor deposition method. the films are obtained using high h-2 diluted sih4 as a reaction gas source and using ph3 as the doping gas source of phosphor atoms. futhermore, the heterojunction diodes are also fabricated by using (n)nc-si:h films and (p)c-si substrate. i-v properties are investigated in the temperature range of 230-420k. the experimental results domenstrate that (n)nc-si:h/(p) c-si heterojunction is a typical abrupt heterojunction having good rectifing and temperature properties. carrier transport mechanisms are tunneling - recombination model at forward bias voltages. in the range of low bias voltages ( v-f< 0.8 v), the current is determined by recombination at the (n)nc-si:h side of the space charge region, while the current becomes tunneing at higher bias voltages( v-f>1.0 v). the present heterojunction has high reverse breakdown voltage ( > - 75 v) and low reverse current (approximate to na). |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12350]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Peng YC,Xu GY,He YL,et al. Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction[J]. acta physica sinica,2000,49(12):2466-2471. |
| APA | Peng YC,Xu GY,He YL,Liu M,&Li YX.(2000).Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction.acta physica sinica,49(12),2466-2471. |
| MLA | Peng YC,et al."Carrier transport properties of the (n)nc-Si : H/(p)c-Si heterojunction".acta physica sinica 49.12(2000):2466-2471. |
入库方式： OAI收割
来源：半导体研究所
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