Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 220期号:3页码:216-219 |
| 关键词 | rapid thermal annealing InAs quantum dots InGaAs overgrowth layer photoluminescence OPTICAL-PROPERTIES |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have studied the effects of postgrowth rapid thermal annealing on the optical properties of 3-nm-height inas/gaas quantum dots covered by 3-nm-thick inxga1-xas (x = 0, 0.1, and 0.2) overgrowth layer. at higher annealing temperature (t greater than or equal to 750 degreesc), the photoluminescence peak of ingaas layer has been observed at lower-energy side of the inas quantum-dot peak. in addition, the blueshift in photoluminescence (pl) emission energy is found to he similar for all samples with increasing the annealing temperature from 650 to 850 degreesc. however, the trend of narrowing of photoluminescence linewidth is significantly different for inas quantum dots with different in mole fractions in ingaas overgrowth layer. these results suggest that the intermixing in the lateral direction plays an important role in helping to understand the modification of optical properties induced by rapid thermal annealing. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12352]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer[J]. journal of crystal growth,2000,220(3):216-219. |
| APA | Xu B.(2000).Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer.journal of crystal growth,220(3),216-219. |
| MLA | Xu B."Effects of interdiffusion on the luminescence of InAs/GaAs quantum dots covered by InGaAs overgrowth layer".journal of crystal growth 220.3(2000):216-219. |
入库方式： OAI收割
来源：半导体研究所
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