中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs

文献类型:期刊论文

作者Jin P
刊名journal of applied physics
出版日期2000
卷号88期号:11页码:6429-6435
关键词DELTA-DOPED GAAS UNDOPED GAAS PHOTOREFLECTANCE FIELD SPECTROSCOPY MODULATION ELECTROREFLECTANCE SURFACE
ISSN号0021-8979
通讯作者jin p,nankai univ,dept phys,tianjin 300071,peoples r china.
中文摘要fourier transformation (ft) has been used in the theoretical line shape analysis of franz-keldysh oscillations (fkos) in detail by numerical simulations. fkos from the surface-intrinsic-n(+) gaas structure were obtained in photoreflectance (pr) measurements with various modulation light intensities and with different strengths of bias light illumination, which were used to change the static electric field in the intrinsic layer of the sample. the ft spectra of the pr spectra, including the real part, imaginary part, and the modulus, were very consistent with the theoretical line shapes. the ratio of the square root of the reduced mass (root mu (l)/root mu (h)) and the ratio of transition strength of the electron heavy hole to the electron light hole were obtained from the pt spectra. in addition, the electric field in the intrinsic layer of the sample without and with bias illumination and the modulation field induced by photomodulation were also obtained. (c) 2000 american institute of physics. [s0021-8979(00)02123-x].
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12356]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Jin P. Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs[J]. journal of applied physics,2000,88(11):6429-6435.
APA Jin P.(2000).Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs.journal of applied physics,88(11),6429-6435.
MLA Jin P."Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs".journal of applied physics 88.11(2000):6429-6435.

入库方式: OAI收割

来源:半导体研究所

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