Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots
文献类型：期刊论文
| 作者 | Liu BL ; Xu ZY ; Liu HY ; Wang ZG |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 220期号:1-2页码:51-55 |
| 关键词 | InAlAs/AlGaAs quantum dots photoluminescence time-resolved photoluminescence LIFETIME |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu zy,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | strong temperature dependence of optical properties has been studied in visible inalas/algaas quantum dots, by employing photoluminescence (pl) and time-resolved photoluminescence (trpl) measurements. the fast redshift of the exciton emission peak was observed at much lower temperature range compared to that observed in the inas/gaas qds. in trpl we did not observe the constant decay time even at low temperature. instead, the observed decay time increases quickly with increasing temperature, showing 2d properties in the transient dynamic process. we attributed our results to the strong lateral coupling effect, which results in the formation of the local minibands or extended states from the discrete energy levels. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12362]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu BL,Xu ZY,Liu HY,et al. Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots[J]. journal of crystal growth,2000,220(1-2):51-55. |
| APA | Liu BL,Xu ZY,Liu HY,&Wang ZG.(2000).Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots.journal of crystal growth,220(1-2),51-55. |
| MLA | Liu BL,et al."Strong temperature dependence of photoluminescence properties in visible InAlAs quantum dots".journal of crystal growth 220.1-2(2000):51-55. |
入库方式： OAI收割
来源：半导体研究所
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