Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)
文献类型：期刊论文
| 作者 | Liang JJ ; Chen WD ; Wang YQ ; He J ; Zheng WM ; Wang ZG |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 17期号:11页码:838-840 |
| 关键词 | CRYSTALLINE SILICON LUMINESCENCE ELECTROLUMINESCENCE SEMICONDUCTORS SI |
| ISSN号 | 0256-307x |
| 通讯作者 | liang jj,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | the hydrogenated amorphous siox films (a-siox:h) with various oxygen contents have been prepared using plasma enhanced chemical vapor deposition technique. the films were implanted with erbium and annealed by rapid thermal annealing. an intense photoluminescence (pl) of er at 1.54 mum has been observed at 77 k and at room temperature. the pl intensity depends strongly on both the oxygen content of the film and the rapid thermal annealing temperature and reaches its maximum if the ratio of o/si in the film is approximately equal to 1.0 at 77 k and to 1.76 at room temperature. the microstructure of the film also has strong influences on the pl intensity. the pl intensity at 250 k is slightly more than a half of that at 15 k. it means that the temperature quenching effect of the pl intensity is very weak. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12366]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liang JJ,Chen WD,Wang YQ,et al. Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)[J]. chinese physics letters,2000,17(11):838-840. |
| APA | Liang JJ,Chen WD,Wang YQ,He J,Zheng WM,&Wang ZG.(2000).Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2).chinese physics letters,17(11),838-840. |
| MLA | Liang JJ,et al."Photoluminescence and microstructure of the Erbium-Doped hydrogenated amorphous SiOx(0 < x < 2)".chinese physics letters 17.11(2000):838-840. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。