Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-mu m operation
文献类型：期刊论文
| 作者 | Li C ; Yang QQ ; Wang HJ ; Yu JZ ; Wang QM ; Li YK ; Zhou JM ; Huang H ; Ren XM |
| 刊名 | ieee photonics technology letters
 |
| 出版日期 | 2000 |
| 卷号 | 12期号:10页码:1373-1375 |
| 关键词 | Bragg reflector resonant-cavity-enhanced photodetector responsivity SiGe PHOTODIODE REFLECTORS MIRRORS |
| ISSN号 | 1041-1135 |
| 通讯作者 | li c,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | a back-incident si-0.65 ge-0.35/si multiple quantum-well resonant-cavity-enhanced photodetector operating near 1.3 mum is demonstrated on a separation-by-implantation-oxygen substrate. the resonant cavity is composed of an electron-beam evaporated sio2-si distributed bragg reflector as a top mirror and the interface between the buried sio2 and the si substrate as a bottom mirror. we have obtained the responsivity as high as 31 ma/wi at 1.305 mum and the full width at half maximum of 14 nm. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12374]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li C,Yang QQ,Wang HJ,et al. Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-mu m operation[J]. ieee photonics technology letters,2000,12(10):1373-1375. |
| APA | Li C.,Yang QQ.,Wang HJ.,Yu JZ.,Wang QM.,...&Ren XM.(2000).Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-mu m operation.ieee photonics technology letters,12(10),1373-1375. |
| MLA | Li C,et al."Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-mu m operation".ieee photonics technology letters 12.10(2000):1373-1375. |
入库方式： OAI收割
来源：半导体研究所
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