中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect

文献类型:期刊论文

作者Liao MY ; Zhang JH ; Qin FG ; Liu ZK ; Yang SY ; Wang ZG ; Lee ST
刊名acta physica sinica
出版日期2000
卷号49期号:11页码:2186-2190
关键词amorphous carbon ion bombardment mass-selected low energy ion beam CHEMICAL-VAPOR-DEPOSITION BIAS-ENHANCED NUCLEATION DIAMOND FILMS RAMAN-SCATTERING GROWTH SILICON MECHANISM
ISSN号1000-3290
通讯作者liao my,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china.
中文摘要by mass-selected low energy ion beam deposition, amorphous carbon film was obtained. x-ray diffraction, raman and auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. the main growth mechanism is subsurface implantation. furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond.
学科主题半导体物理
收录类别SCI
语种中文
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12376]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liao MY,Zhang JH,Qin FG,et al. Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect[J]. acta physica sinica,2000,49(11):2186-2190.
APA Liao MY.,Zhang JH.,Qin FG.,Liu ZK.,Yang SY.,...&Lee ST.(2000).Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect.acta physica sinica,49(11),2186-2190.
MLA Liao MY,et al."Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect".acta physica sinica 49.11(2000):2186-2190.

入库方式: OAI收割

来源:半导体研究所

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