Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer
文献类型：期刊论文
| 作者 | Wang XD ; Liu HY ; Niu ZC ; Feng SL |
| 刊名 | acta physica sinica
 |
| 出版日期 | 2000 |
| 卷号 | 49期号:11页码:2230-2234 |
| 关键词 | quantum dots cap layer strain-reducing redshift MU-M EMISSION INGAAS |
| ISSN号 | 1000-3290 |
| 通讯作者 | wang xd,chinese acad sci,inst semicond,state key lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | inas self-assembled quantum dots(qds) covered by 3-nm-thick inxga1-xas(0 less than or equal tox less than or equal to0.3) capping layer have been grown on gaas(100) substrate. transmission electron microscopy shows that ingaas layer reduces the strain in the inas islands,and atomic force microscopy evidences the deposition of ingaas on the top of inas islands when x = 0.3.the significant redshift of the photoluminescence (pl) peak energy and the reduction of pl linewidth of inas quantum dots covered by ingaas are observed. in addition,ingaas overgrowth layer suppresses the temperature sensitivity of pl peak energy. based on our analysis, the strain-reduction and the size distribution of the inas qds are the main cause of the redshift and temperature insensitivity of the pl respectively. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12380]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XD,Liu HY,Niu ZC,et al. Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer[J]. acta physica sinica,2000,49(11):2230-2234. |
| APA | Wang XD,Liu HY,Niu ZC,&Feng SL.(2000).Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer.acta physica sinica,49(11),2230-2234. |
| MLA | Wang XD,et al."Study of self-assembled InAs quantum dot structure covered by InxGa1-xAs(0 <= x <= 0.3) capping layer".acta physica sinica 49.11(2000):2230-2234. |
入库方式： OAI收割
来源：半导体研究所
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