Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells
文献类型：期刊论文
| 作者 | Wang XG ; Chang Y ; Gui YS ; Chu JH ; Cao X ; Zeng YP ; Kong MY |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:5页码:333-337 |
| 关键词 | p-HEMTs quantum well photoluminescence GAAS |
| ISSN号 | 1001-9014 |
| 通讯作者 | wang xg,chinese acad sci,shanghai inst tech phys,natl lab infrared phys,shanghai 200083,peoples r china. |
| 中文摘要 | photoluminescence (pl) measurements were performed on several series of single-side si-doped pseudomorphic high electron mobility transistors (p-hemts) quantum well (qw) samples, with different spacer layer widths, well widths and si delta -doped concentrations , under different temperatures and excitation power densities. the dynamic competitive luminescence mechanism between the radiations of e2-hh1 and e1-hh1 was discussed in detail. the confining potential, subband energies, corresponding envelope functions, subband occupations and transferring efficiency etc., were calculated by self-consistent finite differential method at different temperatures in comparison with the present experiment results. the relative variation of the integrated luminescence intensity of the two transitions (e1-hh1 and e2-hh1) was found to be dependent on the temperature and the structure's properties, e. g. spacer layer width, dopant concentration and well width. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12390]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XG,Chang Y,Gui YS,et al. Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells[J]. journal of infrared and millimeter waves,2000,19(5):333-337. |
| APA | Wang XG.,Chang Y.,Gui YS.,Chu JH.,Cao X.,...&Kong MY.(2000).Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells.journal of infrared and millimeter waves,19(5),333-337. |
| MLA | Wang XG,et al."Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells".journal of infrared and millimeter waves 19.5(2000):333-337. |
入库方式： OAI收割
来源：半导体研究所
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