Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures
文献类型：期刊论文
| 作者 | Li Q ; Xu ZY ; Ge WK |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:5页码:343-346 |
| 关键词 | ultrafast spectroscopy low-dimension heterostructure III-V semiconductors QUANTUM DOTS ELECTRON RELAXATION GAAS |
| ISSN号 | 1001-9014 |
| 通讯作者 | li q,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the rapid carrier capture and relaxation processes in inas/gaas quantum dots were studied at 77k by using a simple degenerate pump-probe technique. a rising process was observed in the transient reflectivity, following the initial fast relaxation associated with gaas bulk matrix, and this rising process was assigned to be related to the carrier capture from the gaas barriers to inas layers. the assignment was modeled using kramers-kronig relation. by analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. the measured capture times decrease with the increase of carrier concentration. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12392]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li Q,Xu ZY,Ge WK. Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures[J]. journal of infrared and millimeter waves,2000,19(5):343-346. |
| APA | Li Q,Xu ZY,&Ge WK.(2000).Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures.journal of infrared and millimeter waves,19(5),343-346. |
| MLA | Li Q,et al."Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures".journal of infrared and millimeter waves 19.5(2000):343-346. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。