The influence of growth interruption on quantum dot laser
文献类型：期刊论文
| 作者 | Wang H ; Wang HL ; Wang XD ; Niu ZC ; Feng SL |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:5页码:347-350 |
| 关键词 | self-organized InAs quantum dots quantum dots laser growth interruption band-filling |
| ISSN号 | 1001-9014 |
| 通讯作者 | wang h,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | growth interruption was introduced during the growth of gaas capping layer of self-organized quantum dots. the comparison of two qd lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature, and weaker temperature dependence of lasing energy. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12394]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang H,Wang HL,Wang XD,et al. The influence of growth interruption on quantum dot laser[J]. journal of infrared and millimeter waves,2000,19(5):347-350. |
| APA | Wang H,Wang HL,Wang XD,Niu ZC,&Feng SL.(2000).The influence of growth interruption on quantum dot laser.journal of infrared and millimeter waves,19(5),347-350. |
| MLA | Wang H,et al."The influence of growth interruption on quantum dot laser".journal of infrared and millimeter waves 19.5(2000):347-350. |
入库方式： OAI收割
来源：半导体研究所
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