中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots

文献类型:期刊论文

作者Xu B; Ye XL
刊名journal of crystal growth
出版日期2000
卷号219期号:3页码:199-204
关键词quantum dots InAs/GaAs MBE photoluminescence absorption OPTICAL-PROPERTIES PHOTOLUMINESCENCE SPECTROSCOPY INGAAS LASER
ISSN号0022-0248
通讯作者zhang yc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要in this work we report the photoluminescence (pl) and interband absorption study of si-modulation-doped multilayer inas/gaas quantum dots grown by molecular beam epitaxy (mbe) on (100) oriented gaas substrates. low-temperature pl shows a distinctive double-peak feature. power-dependent pl and transmission electron microscopy (tem) confirm that they stem from the ground states emission of islands of bimodal size distribution. temperature-dependent pl study indicates that the family of small dots is ensemble effect dominated while the family of large dots is likely to be dominated by the intrinsic property of single quantum dots (qds). the temperature-dependent pl and interband absorption measurements are discussed in terms of thermalized redistribution of the carriers among groups of qds of different sizes in the ensemble. (c) 2000 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12400]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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GB/T 7714
Xu B,Ye XL. Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots[J]. journal of crystal growth,2000,219(3):199-204.
APA Xu B,&Ye XL.(2000).Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots.journal of crystal growth,219(3),199-204.
MLA Xu B,et al."Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots".journal of crystal growth 219.3(2000):199-204.

入库方式: OAI收割

来源:半导体研究所

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