Point defects in III-V compound semiconductors
文献类型：期刊论文
| 作者 | Chen N |
| 刊名 | defects and diffusion in semiconductors
 |
| 出版日期 | 2000 |
| 卷号 | 183-1期号:0页码:85-93 |
| 关键词 | compound semiconductors point defects deep level centres stoichiometry MOLECULAR-BEAM EPITAXY GAAS SINGLE-CRYSTALS SEMIINSULATING GALLIUM-ARSENIDE SEMI-INSULATING GAAS ELECTRICAL-PROPERTIES LATTICE-PARAMETER NATIVE DEFECTS CARBON DIFFRACTOMETER STOICHIOMETRY |
| ISSN号 | 1012-0386 |
| 通讯作者 | chen n,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100864,peoples r china. |
| 中文摘要 | point defects in iii-v compound semiconductors were analyzed systematically in this paper. the effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in iii-v compound semiconductors were calculated with a simple model. the formation energies of vacancies in compound semiconductors can be obtained by this calculation. a practical technique established on this model has been utilized for measuring the stoichiometry in gaas. the relationship between stoichiometry and deep level centers in gaas was also investigated. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12404]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen N. Point defects in III-V compound semiconductors[J]. defects and diffusion in semiconductors,2000,183-1(0):85-93. |
| APA | Chen N.(2000).Point defects in III-V compound semiconductors.defects and diffusion in semiconductors,183-1(0),85-93. |
| MLA | Chen N."Point defects in III-V compound semiconductors".defects and diffusion in semiconductors 183-1.0(2000):85-93. |
入库方式： OAI收割
来源：半导体研究所
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