Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors
文献类型：期刊论文
| 作者 | Wu J ; Lin F |
| 刊名 | defects and diffusion in semiconductors
 |
| 出版日期 | 2000 |
| 卷号 | 183-1期号:0页码:147-152 |
| 关键词 | In0.8Ga0.2As/InAlAs/InP misfit dislocations surface morphology GROWTH RELAXATION SUBSTRATE CIRCUITS |
| ISSN号 | 1012-0386 |
| 通讯作者 | wu j,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | defects and morphologies are presented in this paper as revealed with transmission electron microscope (tem) in the in(0.8)g(0.2)as/inalas heterostructure on inp(001) for high-electron-mobility transistors application. most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their burges vectors. the misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of burges vectors in [001] pointing up or down. if b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. in addition, the periodical modulation in height along [-110] on the in(0.8)g(0.2)as surface is observed, this surface morphology is not associated with the relaxation of mismatch strain. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12406]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wu J,Lin F. Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors[J]. defects and diffusion in semiconductors,2000,183-1(0):147-152. |
| APA | Wu J,&Lin F.(2000).Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors.defects and diffusion in semiconductors,183-1(0),147-152. |
| MLA | Wu J,et al."Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors".defects and diffusion in semiconductors 183-1.0(2000):147-152. |
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来源：半导体研究所
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