The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 218期号:2-4页码:203-208 |
| ISSN号 | 0022-0248 |
| 关键词 | high-index InP substrate In(Ca)As nanostructures MBE MOLECULAR-BEAM-EPITAXY INGAAS QUANTUM DOTS ORIENTED GAAS OPTICAL CHARACTERIZATION ISLANDS |
| 通讯作者 | sun zz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | strained inas nanostructures have been grown by solid-source molecular beam epitaxy in in0.52al0.48as matrix on different inp substrate surfaces ((0 0 1) and (1 1 n)a/b (n = 1 - 5)). the morphology of the nanostructures was characterized using atomic force microscopy (afm). the afm results reveal interesting differences in the size, shape, and alignment of the nanostructures between different oriented surfaces. it was found that some faceted nanostructures tend to form on a-type surfaces, the shape and the alignment of these nanostructures show clear dependence on the substrate orientation. samples grown on (0 0 1) and b-type surfaces showed preferentially dense round dots. dots formed on (1 1 3)b, (1 1 3)b and (1 1 5)b surfaces have a higher dot density and size homogeneity, which shows a potential for the production of high-quality and customized self-assembled quantum dots for photonics applications. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12416]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates[J]. journal of crystal growth,2000,218(2-4):203-208. |
| APA | Xu B.(2000).The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates.journal of crystal growth,218(2-4),203-208. |
| MLA | Xu B."The effect of substrate orientation on the morphology of InAs nanostructures on (001) and (11n)A/B(n=1-5) InP substrates".journal of crystal growth 218.2-4(2000):203-208. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。