Formation of InAs quantum dots on low-temperature GaAs epi-layer
文献类型：期刊论文
| 作者 | Wang XD ; Niu ZC ; Wang H ; Feng SL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 218期号:2-4页码:209-213 |
| 关键词 | quantum dot low-temperature GaAs As precipitates annealing TEM PL MOLECULAR-BEAM EPITAXY ISLANDS GROWTH SURFACES |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang xd,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | inas self-organized quantum dots (qds) grown on annealed low-temperature gaas (lt-gaas) epi-layers and on normal temperature gaas buffer layers have been compared by transmission electron microscopy (tem) and photoluminescence (pl) measurements. tem evidences that self-organized qds were formed with a smaller size and larger density than that on normal gaas buffer layers. it is discussed that local tensile surface strain regions that are preferred sites for inas islands nucleation are increased in the case of the lt-gaas buffer layers due to exhibiting as precipitates. the pl spectra show a blue-shifted peak energy with narrower linewidth revealing the improvement of optical properties of the qds grown on lt-gaas epi-layers. it suggests us a new way to improve the uniformity and change the energy band structure of the inas self-organized qds by carefully controlling the surface stress states of the lt-gaas buffers on which the qds are formed. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12418]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XD,Niu ZC,Wang H,et al. Formation of InAs quantum dots on low-temperature GaAs epi-layer[J]. journal of crystal growth,2000,218(2-4):209-213. |
| APA | Wang XD,Niu ZC,Wang H,&Feng SL.(2000).Formation of InAs quantum dots on low-temperature GaAs epi-layer.journal of crystal growth,218(2-4),209-213. |
| MLA | Wang XD,et al."Formation of InAs quantum dots on low-temperature GaAs epi-layer".journal of crystal growth 218.2-4(2000):209-213. |
入库方式： OAI收割
来源：半导体研究所
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