中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy

文献类型:期刊论文

作者Xu B; Ye XL
刊名journal of crystal growth
出版日期2000
卷号218期号:2-4页码:451-454
关键词quantum dots molecular beam epitaxy InAs/InP INP ISLANDS GAAS MATRIX
ISSN号0022-0248
通讯作者li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要self-assembled inas nanostructures on (0 0 1)inp substrate have been grown by molecular beam epitaxy (mbe) and evaluated by transmission electron microscopy (tem) and photoluminescence (pl). it is found that the morphologies of inas nanostructures depend strongly on the underlying alloy. through introducing a lattice-matched underlying inalgaas layer on inalas buffer layer, the inas quantum dots (qds) can be much more uniform in size and great improvement in pl properties can be attained at the same time. in particular, 1.55 mu m luminescence at room temperature (rt) can be realized in inas qds deposited on (0 0 1)inp substrate with underlying inalgaas layer. (c) 2000 published by elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12422]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Xu B,Ye XL. Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy[J]. journal of crystal growth,2000,218(2-4):451-454.
APA Xu B,&Ye XL.(2000).Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy.journal of crystal growth,218(2-4),451-454.
MLA Xu B,et al."Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy".journal of crystal growth 218.2-4(2000):451-454.

入库方式: OAI收割

来源:半导体研究所

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