Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu B ; Ye XL
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 218期号:2-4页码:451-454 |
| 关键词 | quantum dots molecular beam epitaxy InAs/InP INP ISLANDS GAAS MATRIX |
| ISSN号 | 0022-0248 |
| 通讯作者 | li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-assembled inas nanostructures on (0 0 1)inp substrate have been grown by molecular beam epitaxy (mbe) and evaluated by transmission electron microscopy (tem) and photoluminescence (pl). it is found that the morphologies of inas nanostructures depend strongly on the underlying alloy. through introducing a lattice-matched underlying inalgaas layer on inalas buffer layer, the inas quantum dots (qds) can be much more uniform in size and great improvement in pl properties can be attained at the same time. in particular, 1.55 mu m luminescence at room temperature (rt) can be realized in inas qds deposited on (0 0 1)inp substrate with underlying inalgaas layer. (c) 2000 published by elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12422]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy[J]. journal of crystal growth,2000,218(2-4):451-454. |
| APA | Xu B,&Ye XL.(2000).Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy.journal of crystal growth,218(2-4),451-454. |
| MLA | Xu B,et al."Room temperature 1.55 mu m emission from InAs quantum dots grown on (001)InP substrate by molecular beam epitaxy".journal of crystal growth 218.2-4(2000):451-454. |
入库方式： OAI收割
来源：半导体研究所
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