Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate
文献类型：期刊论文
| 作者 | Ye XL ; Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 219期号:1-2页码:17-21 |
| 关键词 | quantum dots molecular beam epitaxy high index MOLECULAR-BEAM EPITAXY STRAINED ISLANDS GAAS ORGANIZATION INP(001) LASERS INGAAS LAYER |
| ISSN号 | 0022-0248 |
| 通讯作者 | li yf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-assembled inas quantum dots (qds) in inalas grown on (001) and (311)b inp substrates by molecular beam epitaxy (mbe) have been comparatively investigated. a correlated study of atomic force microscopy (afm) and photoluminescence (pl) disclosed that inas qds grown on high-index inp substrates can lead to high density and uniformity. by introducing a lattice-matched inalgaas overlayer on inalas buffer, still more dense and uniform inas qds were obtained in comparison with inas qds formed with only inalas matrix. moreover, two-dimensional well-ordered inas dots with regular shape grown on (311)b inp substrates are reported for the first time. we explained this exceptional phenomenon from strain energy combined with kinetics point of view. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12424]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B. Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate[J]. journal of crystal growth,2000,219(1-2):17-21. |
| APA | Ye XL,&Xu B.(2000).Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate.journal of crystal growth,219(1-2),17-21. |
| MLA | Ye XL,et al."Two-dimensional ordering of self-assembled InAs quantum dots grown on (311)B InP substrate".journal of crystal growth 219.1-2(2000):17-21. |
入库方式： OAI收割
来源：半导体研究所
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