中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Self-assembled InAs quantum wires on InP(001)

文献类型:期刊论文

作者Xu B
刊名journal of crystal growth
出版日期2000
卷号219期号:1-2页码:180-183
关键词InAs quantum wires InP(001) SHORT-PERIOD SUPERLATTICES GAAS EPITAXY ISLANDS
ISSN号0022-0248
通讯作者wu j,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要self-assembled inas quantum wires (qwrs) embedded in in0.52al0.48as, in0.53ga0.47as, and (in0.52al0.48as)(n)/(in0.53ga0.47as)(m)-short-period-lattice matrices on inp(001) were fabricated with molecular beam epitaxy (mbe). these qwr lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (rheed). alignment of quantum wires in different layers in the inas/spacer multilayer structures depends on the composition of spacer layers. (c) 2000 elsevier science b.v. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12426]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xu B. Self-assembled InAs quantum wires on InP(001)[J]. journal of crystal growth,2000,219(1-2):180-183.
APA Xu B.(2000).Self-assembled InAs quantum wires on InP(001).journal of crystal growth,219(1-2),180-183.
MLA Xu B."Self-assembled InAs quantum wires on InP(001)".journal of crystal growth 219.1-2(2000):180-183.

入库方式: OAI收割

来源:半导体研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。