Self-assembled InAs quantum wires on InP(001)
文献类型:期刊论文
作者 | Xu B![]() |
刊名 | journal of crystal growth
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出版日期 | 2000 |
卷号 | 219期号:1-2页码:180-183 |
关键词 | InAs quantum wires InP(001) SHORT-PERIOD SUPERLATTICES GAAS EPITAXY ISLANDS |
ISSN号 | 0022-0248 |
通讯作者 | wu j,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
中文摘要 | self-assembled inas quantum wires (qwrs) embedded in in0.52al0.48as, in0.53ga0.47as, and (in0.52al0.48as)(n)/(in0.53ga0.47as)(m)-short-period-lattice matrices on inp(001) were fabricated with molecular beam epitaxy (mbe). these qwr lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (rheed). alignment of quantum wires in different layers in the inas/spacer multilayer structures depends on the composition of spacer layers. (c) 2000 elsevier science b.v. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12426] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Xu B. Self-assembled InAs quantum wires on InP(001)[J]. journal of crystal growth,2000,219(1-2):180-183. |
APA | Xu B.(2000).Self-assembled InAs quantum wires on InP(001).journal of crystal growth,219(1-2),180-183. |
MLA | Xu B."Self-assembled InAs quantum wires on InP(001)".journal of crystal growth 219.1-2(2000):180-183. |
入库方式: OAI收割
来源:半导体研究所
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