1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films
文献类型：期刊论文
| 作者 | Liang JJ ; Chen WD ; Wang YQ ; Chang Y ; Wang ZG |
| 刊名 | chinese physics
 |
| 出版日期 | 2000 |
| 卷号 | 9期号:10页码:783-786 |
| 关键词 | erbium photoluminescence a-SiO : H boron and phosphorus co-doping CRYSTALLINE SI SILICON ELECTROLUMINESCENCE ER |
| ISSN号 | 1009-1963 |
| 通讯作者 | liang jj,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | hydrogenated amorphous silicon films co-doped with oxygen (o), boron (b) and phosphorus (p) were fabricated using pecvd technique. the erbium (er) implanted samples were annealed in a n-2 ambient by rapid thermal annealing. strong photoluminescence (pl) spectra of these samples were observed at room temperature. the incorporation of o, b and p could not only enhance the pl intensity but also the thermal annealing temperature of the strongest pl intensity. it seems that the incorporation of b or p can decrease the grain boundary potential barriers thus leading to an easier movement of carriers and a stronger pl intensity. temperature dependence of pl indicated the thermal quenching of er-doped hydrogenated amorphous silicon is very weak. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12432]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liang JJ,Chen WD,Wang YQ,et al. 1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films[J]. chinese physics,2000,9(10):783-786. |
| APA | Liang JJ,Chen WD,Wang YQ,Chang Y,&Wang ZG.(2000).1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films.chinese physics,9(10),783-786. |
| MLA | Liang JJ,et al."1.5 mu m luminescence characteristic of erbium in B, P doped a-SiO : H films".chinese physics 9.10(2000):783-786. |
入库方式： OAI收割
来源：半导体研究所
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