Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Wang XD ; Niu ZC ; Feng SL |
| 刊名 | japanese journal of applied physics part 1-regular papers short notes & review papers
 |
| 出版日期 | 2000 |
| 卷号 | 39期号:9a页码:5076-5079 |
| ISSN号 | 0021-4922 |
| 关键词 | InAs quantum dots strain-reduction molecular beam epitaxy (MBE) red shift photoluminescence 1.3 MU-M INGAAS ENERGY |
| 通讯作者 | niu zc,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | optical and structural properties of self-organized inas/gaas quantum dots (qds) with inxga1-xas or gaas cover layers grown by molecular beam epitaxy (mbe) have been characterized by transmission electron microscopy (tem), atomic force microscopy (afm) and photoluminescence (pl) measurements. the tem and afm images show that the surface stress of the inas qds was suppressed by overgrowth of a inxga1-xas covering layer on the top of the qds and the uniformity of the qds preserved. pl measurements reveal that red shifts of the pl emission due to the reduction of the surface strain of the inas islands was observed and the temperature sensitivity of the pl emission energy was suppressed by overgrowth of inxga1-xas layers compared to that by overgrowth of gaas layers. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12434]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XD,Niu ZC,Feng SL. Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots[J]. japanese journal of applied physics part 1-regular papers short notes & review papers,2000,39(9a):5076-5079. |
| APA | Wang XD,Niu ZC,&Feng SL.(2000).Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots.japanese journal of applied physics part 1-regular papers short notes & review papers,39(9a),5076-5079. |
| MLA | Wang XD,et al."Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots".japanese journal of applied physics part 1-regular papers short notes & review papers 39.9a(2000):5076-5079. |
入库方式： OAI收割
来源：半导体研究所
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