Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE
文献类型：期刊论文
| 作者 | Zhu QS ; Matsushima H ; Hiramatsu K ; Sawaki N |
| 刊名 | applied surface science
 |
| 出版日期 | 2000 |
| 卷号 | 167期号:3-4页码:149-151 |
| 关键词 | CHEMICAL VAPOR-DEPOSITION AIN BUFFER LAYER GROWTH FACETS WIRES MOCVD |
| ISSN号 | 0169-4332 |
| 通讯作者 | zhu qs,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | three-dimensional gan pyramids have been successfully obtained on submicron dot-patterned (0001) sapphire substrates by using the selective metalorganic vapor phase epitaxy (movpe) technique. the dot-pattern is a hexagon arranged with a 0.5-mu m width and 1.0-mu m spacing. the gan structure comprises a hexagonal pyramid covered with six {1 (1) over bar 01} pyramidal facets on the side of a hexagonal pyramid having a (0001) facet on the top. cathodoluminescence (cl) measurement was carried our. on the hexagonal pyramid at low temperature. two distinct spectra were observed to occur at about 359 and 329 nm. the higher energy is thought to be related to gan dot, and the lower one is due to gan dot band edge emission. the intensities of the two spectra were investigated as a function of temperature in the range of 135-150 k. (c) 2000 published by elsevier science b.v. |
| 学科主题 | 半导体化学 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12436]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu QS,Matsushima H,Hiramatsu K,et al. Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE[J]. applied surface science,2000,167(3-4):149-151. |
| APA | Zhu QS,Matsushima H,Hiramatsu K,&Sawaki N.(2000).Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE.applied surface science,167(3-4),149-151. |
| MLA | Zhu QS,et al."Cathodoluminescence on GaN hexagonal pyramids on submicron dot-patterns via selective MOVPE".applied surface science 167.3-4(2000):149-151. |
入库方式： OAI收割
来源：半导体研究所
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