Modeling the dynamics of Si wafer bonding during annealing
文献类型：期刊论文
| 作者 | Han WH
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2000 |
| 卷号 | 88期号:7页码:4404-4406 |
| 关键词 | SILICON |
| ISSN号 | 0021-8979 |
| 通讯作者 | han wh,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the bonding behavior of silicon wafers depends on activation energy for the formation of siloxane bonds. in this article we developed a quantitative model on the dynamics of silicon wafer bonding during annealing. based on this model, a significant difference in the bonding behaviors is compared quantitatively between the native oxide bonding interface and the thermal oxide bonding interface. the results indicate that the bonding strength of the native oxide interface increases with temperature much more rapidly than that of the thermal oxide interface. (c) 2000 american institute of physics. [s0021-8979(00)05520-1]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12448]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han WH. Modeling the dynamics of Si wafer bonding during annealing[J]. journal of applied physics,2000,88(7):4404-4406. |
| APA | Han WH.(2000).Modeling the dynamics of Si wafer bonding during annealing.journal of applied physics,88(7),4404-4406. |
| MLA | Han WH."Modeling the dynamics of Si wafer bonding during annealing".journal of applied physics 88.7(2000):4404-4406. |
入库方式： OAI收割
来源：半导体研究所
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