Self-assembled InAs/GaAs quantum dots and quantum dot laser
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | science in china series a-mathematics
 |
| 出版日期 | 2000 |
| 卷号 | 43期号:8页码:861-870 |
| 关键词 | quantum dot spacial ordering quantum dot laser WELL LASERS |
| ISSN号 | 1006-9283 |
| 通讯作者 | wang zg,chinese acad sci,inst semicond,lab semicon mat sci,beijing 100083,peoples r china. |
| 中文摘要 | systematic study of molecular beam epitaxy-grown self-assembled in(ga)as/gaas, in-alas/algaas/gaas, and inas/inalas/inp quantum dots (qds) is demonstrated. by adjusting growth conditions, surprising alignment, preferential elongation, and pronounced sequential coalescence of dots under the specific condition are realized. room-temperature (rt) continuous-wave (cw) lasing at the wavelength of 960 nm with output power of 1 w is achieved from vertical coupled inas/gaas qds ensemble. the rt threshold current density is 218 a/cm(2). an rt cw output power of 0.53 w ensures at least 3 000 h lasing (only drops 0.83 db). this is one of the best results ever reported. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12456]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Self-assembled InAs/GaAs quantum dots and quantum dot laser[J]. science in china series a-mathematics,2000,43(8):861-870. |
| APA | Xu B.(2000).Self-assembled InAs/GaAs quantum dots and quantum dot laser.science in china series a-mathematics,43(8),861-870. |
| MLA | Xu B."Self-assembled InAs/GaAs quantum dots and quantum dot laser".science in china series a-mathematics 43.8(2000):861-870. |
入库方式： OAI收割
来源：半导体研究所
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