Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)
文献类型：期刊论文
| 作者 | Xu B ; Ye XL
|
| 刊名 | journal of applied physics
 |
| 出版日期 | 2000 |
| 卷号 | 88期号:6页码:3392-3395 |
| ISSN号 | 0021-8979 |
| 关键词 | 1.3 MU-M MOLECULAR-BEAM EPITAXY ROOM-TEMPERATURE PHOTOLUMINESCENCE LINEWIDTH EMISSION LASERS ENERGY |
| 通讯作者 | liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | optical and structural investigations of inas quantum dots (qds) covered by inxga1-xas (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. the decrease of strain in the growth direction of inas quantum dots covered by ingaas layer instead of gaas is demonstrated by transmission electron microscopy experiments. in addition, the atomic force microscopy measurement shows that the surface of inas islands with 3-nm-thick in0.2ga0.8as becomes flatter. however, the ingaas islands nucleate on the top of quantum dots during the process of inas islands covered with in0.3ga0.7as. the significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of inas quantum dots covered by ingaas are observed. the energy gap change of inas qds covered by ingaas could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height. (c) 2000 american institute of physics. [s0021-8979(00)04018-4]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12462]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B,Ye XL. Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)[J]. journal of applied physics,2000,88(6):3392-3395. |
| APA | Xu B,&Ye XL.(2000).Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3).journal of applied physics,88(6),3392-3395. |
| MLA | Xu B,et al."Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)".journal of applied physics 88.6(2000):3392-3395. |
入库方式： OAI收割
来源：半导体研究所
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