Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate
文献类型：期刊论文
| 作者 | Chen Y ; Li GH ; Han HX ; Wang ZP ; Xu DP ; Yang H |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 17期号:8页码:612-614 |
| 关键词 | MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE |
| ISSN号 | 0256-307x |
| 通讯作者 | chen y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | photoluminescence measurements have been performed on cubic gan films with carrier concentration as low as 3 x 10(13) cm(-3). from the temperature and excitation intensity dependence, the emission lines at 3.268, 3.150 and 3.081 ev were assigned to the excitonic, donor-acceptor pair, and free-to-acceptor transitions, respectively additionally, we observed two additional emission lines at 2.926 and 2.821 ev, and suggested that they belong to donor-acceptor pair transitions. furthermore, from the temperature dependence of integral intensities, we confirmed that three donor-acceptor pair transitions (3.150, 2.926, and 2.821 ev) are from a common shallow donor to three different accepters. the excitonic emission at 3.216 ev has a full-width-at-half-maximum value of 41 mev at room temperature, which indicates a good optical quality of our sample. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12468]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Y,Li GH,Han HX,et al. Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate[J]. chinese physics letters,2000,17(8):612-614. |
| APA | Chen Y,Li GH,Han HX,Wang ZP,Xu DP,&Yang H.(2000).Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate.chinese physics letters,17(8),612-614. |
| MLA | Chen Y,et al."Optical transitions in cubic GaN grown by metalorganic chemical vapor deposition on GaAs (100) substrate".chinese physics letters 17.8(2000):612-614. |
入库方式： OAI收割
来源：半导体研究所
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