Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates
文献类型：期刊论文
| 作者 | Yang Z ; Sou IK ; Chen YH |
| 刊名 | journal of vacuum science & technology b
 |
| 出版日期 | 2000 |
| 卷号 | 18期号:4页码:2271-2273 |
| 关键词 | REFLECTANCE DIFFERENCE SPECTROSCOPY ZNSE/GAAS INTERFACE STATES GAAS |
| ISSN号 | 1071-1023 |
| 通讯作者 | yang z,hong kong univ sci & technol,adv mat res inst,clearwater bay,kowloon,hong kong,peoples r china. |
| 中文摘要 | we show that part of the reflectance difference resonance near the e-0 energy of znse is due to the anisotropic in-plane strain in the znse thin films, as films grown on three distinctly different substrates, gaas, gap, and zns, all show the resonance at the same energy. such anisotropic strain induced resonance is predicted and also observed near the e-1/e-1+delta(1) energies in znse grown on gaas. the theory also predicts that there should be no resonance due to strain at, the e-0+delta(0) energy, which is consistent with experiments. the strain anisotropy is rather independent of the znse layer thickness, or whether the film is strain relaxed. for znse films with large lattice mismatch with substrates, the resonance at the e-1/e-1+delta(1) energies is absent, very likely due to the poor crystalline quality of the 20 nm or so surface layer. (c) 2000 american vacuum society. [s0734-211x(00)05604-3]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12472]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yang Z,Sou IK,Chen YH. Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates[J]. journal of vacuum science & technology b,2000,18(4):2271-2273. |
| APA | Yang Z,Sou IK,&Chen YH.(2000).Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates.journal of vacuum science & technology b,18(4),2271-2273. |
| MLA | Yang Z,et al."Anisotropic strain in (100) ZnSe epilayers grown on lattice mismatched substrates".journal of vacuum science & technology b 18.4(2000):2271-2273. |
入库方式： OAI收割
来源：半导体研究所
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