中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Investigation on anisotropy of vertical-cavity surface-emitting lasers

文献类型:期刊论文

作者Liu SA ; Lin SM ; Cheng P ; Zhang GB ; Wang QM ; Chen Y ; Li GH ; Han HX
刊名journal of applied physics
出版日期2000
卷号88期号:5页码:3102-3104
关键词SEMICONDUCTOR MICROCAVITIES POLARITON PHOTOLUMINESCENCE SPONTANEOUS EMISSION OPERATION EXCITONS
ISSN号0021-8979
通讯作者liu sa,chinese acad sci,inst semicond,natl lab integrated optoelect,beijing 100083,peoples r china.
中文摘要we have studied the spontaneous emission of polarized excitons in the gainp/algainp vertical-cavity surface-emitting lasers from 50 k to room temperature. it is observed that the spontaneous emission peak enters and leaves the resonant regime. at the resonant regime, the emission intensities of the perpendicularly and horizontally polarized excitons are enhanced and their proportions are different from that in nonresonant regime. these experimental results are explained by the dressed exciton theory of the semiconductor microcavity device. based on this theory, the intensity enhancement and the polarization dependence are understood as cooperative emission and the microcavity anisotropy. (c) 2000 american institute of physics. [s0021-8979(00)05315-9].
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12476]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Liu SA,Lin SM,Cheng P,et al. Investigation on anisotropy of vertical-cavity surface-emitting lasers[J]. journal of applied physics,2000,88(5):3102-3104.
APA Liu SA.,Lin SM.,Cheng P.,Zhang GB.,Wang QM.,...&Han HX.(2000).Investigation on anisotropy of vertical-cavity surface-emitting lasers.journal of applied physics,88(5),3102-3104.
MLA Liu SA,et al."Investigation on anisotropy of vertical-cavity surface-emitting lasers".journal of applied physics 88.5(2000):3102-3104.

入库方式: OAI收割

来源:半导体研究所

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