Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells
文献类型：期刊论文
| 作者 | Zhang MH ; Han YJ ; Zhang YH ; Huang Q ; Bao CL ; Wang WX ; Zhou JM ; Lu LW |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 217期号:4页码:355-359 |
| 关键词 | LT-GaAs LT MQWs defect photoluminescence electroabsorption SPATIAL LIGHT MODULATORS MOLECULAR-BEAM EPITAXY GAAS RECOMBINATION DYNAMICS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhang mh,chinese acad sci,inst phys,ctr condensed matter phys,pob 603,beijing 100080,peoples r china. |
| 中文摘要 | optical transient current spectroscopy (otcs), photoluminescence (pl) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown gaas/algaas multiple quantum well structures during the postgrowth rapid thermal annealing. the sample was grown at 350 degrees c by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)a) (001) gaas substrate. after growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees c. it is found that the integrated pl intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees c and finally recovers at higher temperatures. otcs measurement shows that besides as,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 ev in the as-grown and 500 degrees c-annealed samples. above 600 degrees c, otcs signals from as,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. it is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12482]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhang MH,Han YJ,Zhang YH,et al. Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells[J]. journal of crystal growth,2000,217(4):355-359. |
| APA | Zhang MH.,Han YJ.,Zhang YH.,Huang Q.,Bao CL.,...&Lu LW.(2000).Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells.journal of crystal growth,217(4),355-359. |
| MLA | Zhang MH,et al."Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells".journal of crystal growth 217.4(2000):355-359. |
入库方式： OAI收割
来源：半导体研究所
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