Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice
文献类型:期刊论文
作者 | Wang HL; Wang HL; Jiang DS![]() |
刊名 | physica e
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出版日期 | 2000 |
卷号 | 8期号:2页码:141-145 |
关键词 | superlattices GaAs/AlAs electric field domains tunnelling OSCILLATIONS |
ISSN号 | 1386-9477 |
通讯作者 | wang jn,hong kong univ sci & technol,dept phys,clear water bay,kowloon,hong kong,peoples r china. |
中文摘要 | we have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped gaas/alas superlattice. the observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (c) 2000 elsevier science b.v. all rights reserved. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12490] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Wang HL,Wang HL,Jiang DS,et al. Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice[J]. physica e,2000,8(2):141-145. |
APA | Wang HL,Wang HL,Jiang DS,&Wang HL.(2000).Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice.physica e,8(2),141-145. |
MLA | Wang HL,et al."Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice".physica e 8.2(2000):141-145. |
入库方式: OAI收割
来源:半导体研究所
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