中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice

文献类型:期刊论文

作者Wang HL; Wang HL; Jiang DS; Wang HL
刊名physica e
出版日期2000
卷号8期号:2页码:141-145
关键词superlattices GaAs/AlAs electric field domains tunnelling OSCILLATIONS
ISSN号1386-9477
通讯作者wang jn,hong kong univ sci & technol,dept phys,clear water bay,kowloon,hong kong,peoples r china.
中文摘要we have observed the transition from static to dynamic electric field domain formation induced by a transverse magnetic field and the sample temperature in a doped gaas/alas superlattice. the observations can be very well explained by a general analysis of instabilities and oscillations of the sequential tunnelling current in superlattices based solely on the magnitude of the negative differential resistance region in the tunnelling characteristic of a single barrier. both increasing magnetic field and sample temperature change the negative differential resistance and cause the transition between static and dynamic electric field domain formation. (c) 2000 elsevier science b.v. all rights reserved.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12490]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Wang HL,Wang HL,Jiang DS,et al. Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice[J]. physica e,2000,8(2):141-145.
APA Wang HL,Wang HL,Jiang DS,&Wang HL.(2000).Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice.physica e,8(2),141-145.
MLA Wang HL,et al."Static and dynamic electric field domain formation in a doped GaAs/AlAs superlattice".physica e 8.2(2000):141-145.

入库方式: OAI收割

来源:半导体研究所

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