Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Xu HZ ; Wang ZG ; Harrison I ; Bell A ; Ansell BJ ; Winser AJ ; Cheng TS ; Foxon CT ; Kawabe M |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 217期号:3页码:228-232 |
| 关键词 | GaN photoluminescence optical quenching of photoconductivity native defect level molecular beam epitaxy N-TYPE GAN DEEP-LEVEL DEFECTS YELLOW LUMINESCENCE MAGNETIC-RESONANCE THIN-FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | kawabe m,univ tsukuba,inst appl phys,tsukuba,ibaraki 3058573,japan. |
| 中文摘要 | deep levels in undoped gan materials grown by modified molecular beam epitaxy (mbe) are investigated by photoluminescence (pl) and optical quenching of photoconductivity measurements. a broad band which extends from 2.1 to 3.0 ev with a maximum at about 2.7 ev is observed, and four prominent quenching bands were found located at 2.18, 2.40, 2.71, and 2.78 ev above the valence band, respectively. these levels are attributed to four holes trap levels existence in the material. the defects cannot be firmly identified at present. (c) 2000 elsevier science b.v, all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12496]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu HZ,Wang ZG,Harrison I,et al. Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy[J]. journal of crystal growth,2000,217(3):228-232. |
| APA | Xu HZ.,Wang ZG.,Harrison I.,Bell A.,Ansell BJ.,...&Kawabe M.(2000).Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy.journal of crystal growth,217(3),228-232. |
| MLA | Xu HZ,et al."Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy".journal of crystal growth 217.3(2000):228-232. |
入库方式： OAI收割
来源：半导体研究所
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